This paper presents a reconfigurable high efficiency, high output voltage, and multiband
class-F radio frequency (RF) voltage doubler and two stages voltage doubler rectifiers for …

This article suggests a broadband linear power amplifier (PA) for DC-10 GHz for Fifth-
generation (5G) and multi-standard applications using 180 nm CMOS technology. The …

Abstract A 0.5–3.0 GHz passive mixer based receiver front-end (RFE) is presented. This
RFE consists of low noise amplifier, passive mixer, transimpedance amplifier (TIA) and local …

This work presents a complementary P–N class-C voltage-controlled power oscillator based
on a new structure asymmetry inductor using a 130 nm CMOS process. The proposed …

This work presents two new structures of inductor to improve the performance of K-band
class-C voltage-controlled oscillators (VCOs) in 0.18-μm CMOS technology. Conventional …

This paper presents a mixer-first wideband receiver front-end designed to achieve high
linearity and harmonic rejection while minimizing power consumption. The proposed RF …

High‐efficiency and high‐linearity three‐stage transformer‐coupled power amplifier (PA)
and power combiner for millimeter‐wave applications using 130 nm CMOS technology are …

A low power receiver is designed and implemented for 2.4 GHz Industrial-Scientific-Medical
(ISM) band in a 40 nm CMOS process. To obtain good noise and linearity performance at …

This paper presents a battery‐free ultra‐low‐power (ULP), highly integrated, and wide‐
bandwidth low‐IF radio‐frequency (RF) receiver designed for millimeter‐wave (mm‐Wave) …

This article introduces a new low-power Class-E/F 2 shunt rectifier and voltage doubler (VD)
for energy harvesting (EH) applications, employing RO4003C substrate. These circuits …