Based on the stability of the deep depletion regime in diamond and the outstanding
properties of this promising material for its use in power devices, p-channel deep depletion …

One of the limitations of materials for high-power devices and structural coatings
applications is heat dissipation. Diamond is a suitable material for heat distribution due to its …

Silicon oxide atomic layer deposition synthesis development over the last few years has
open the route to its use as a dielectric within diamond electronics. Its great band-gap makes …

Metal oxide semiconductor (MOS) capacitors were fabricated based on oxygen-terminated p-
type (100) oriented diamond and SiO 2 grown by atomic layer deposition. A detailed …

We demonstrated the fabrication and operation of vertical diamond Schottky barrier diodes
(SBDs) by inserting an ultrathin lanthanum hexaboride (LaB 6) interlayer at the Zr/diamond …

As diamond possesses only deep dopants, certain conventional physics and
characterization methods are not applicable to diamond devices, owing to the explicit or …

Based on the stability of the deep depletion regime in diamond and the outstanding
properties of this promising material for its use in power devices, p-channel deep depletion …

The improvement of power electronic devices, making them durable and reliable in high
power environments is the key to the efficient low-carbon electrical energy production and …

Metal oxide semiconductor (MOS) capacitors were fabricated based on oxygen-terminated p-
type (100) oriented diamond and SiO2 grown by atomic layer deposition. A detailed …

Silicon oxide atomic layer deposition synthesis development over the last few years has
open the route to its use as a dielectric within diamond electronics. Its great band-gap makes …