Recent advances in NiO/Ga2O3 heterojunctions for power electronics
X Lu, Y Deng, Y Pei, Z Chen… - Journal of Semiconductors, 2023 - iopscience.iop.org
Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor
material that has gained significant attention in the field of high voltage and high frequency …
material that has gained significant attention in the field of high voltage and high frequency …
Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology
H He, C Wu, H Hu, S Wang, F Zhang… - The Journal of …, 2023 - ACS Publications
Previous research has shown that the hybridization of N 2p and O 2p orbitals effectively
suppresses the electrical activity of oxygen vacancies in oxide semiconductors. However …
suppresses the electrical activity of oxygen vacancies in oxide semiconductors. However …
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
Effect of drift layer do** and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-
deposited p-type NiO forming ap–n junction with thick (10 µm) Ga2O3 drift layers grown by …
deposited p-type NiO forming ap–n junction with thick (10 µm) Ga2O3 drift layers grown by …