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Electronic properties of two-dimensional systems
The electronic properties of inversion and accumulation layers at semiconductor-insulator
interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional …
interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional …
Plasmons and magnetoplasmons in semiconductor heterostructures
MS Kushwaha - Surface Science Reports, 2001 - Elsevier
The purpose of this review is to survey the status of the theory and experiment which can
contribute to our knowledge of plasmon excitations in synthetic semiconductor …
contribute to our knowledge of plasmon excitations in synthetic semiconductor …
Synthetic nonlinear semiconductors
M Gurnick, T DeTemple - IEEE Journal of Quantum Electronics, 1983 - ieeexplore.ieee.org
Second-order optical nonlinearities associated with intra-subband transitions in Al x Ga 1-x
AS heterostructure exhibiting the quantum size effect are considered and shown to be large …
AS heterostructure exhibiting the quantum size effect are considered and shown to be large …
Electrodynamics of quasi-two-dimensional electrons
For a system of electrons confined to a thin but finite layer, the nonlocal frequency-
dependent dielectric tensor is constructed in the random-phase approximation and used in …
dependent dielectric tensor is constructed in the random-phase approximation and used in …
Subband spectroscopy by surface channel tunneling
JJ Quinn, G Kawamoto, BD McCombe - Surface Science, 1978 - Elsevier
Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual
degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p …
degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p …
Observation of grating-induced intersubband emission from GaAs/AlGaAs superlattices
We have observed far-infrared emission due to electronic transitions between subbands in
GaAs/AlGaAs superlattices. Population of higher subbands is achieved by applying an …
GaAs/AlGaAs superlattices. Population of higher subbands is achieved by applying an …
Inelastic light scattering by charge carrier excitations in two-dimensional plasmas: Theoretical considerations
E Burstein, A Pinczuk, DL Mills - Surface Science, 1980 - Elsevier
We discuss the single particle and collective charge carrier excitations of the two-
dimensional plasmas that occur in non-polar semiconductors and the microscopic …
dimensional plasmas that occur in non-polar semiconductors and the microscopic …
Perspectives and opportunities with multisubband plasmonics
In highly doped semiconductor quantum wells (QWs), electrons populate various energy
states from different subbands and, therefore, several optical intersubband transitions …
states from different subbands and, therefore, several optical intersubband transitions …
Quantum cascade laser
Publisher Summary This chapter discusses quantum cascade lasers. Most solid-state and
gas lasers rely on narrow optical transitions connecting discrete energy levels in which …
gas lasers rely on narrow optical transitions connecting discrete energy levels in which …
Silicon light-emitting transistor for on-chip optical interconnection
The authors propose a light-emitting field-effect transistor with the active layer made of the
ultrathin single crystal silicon with the (100) surface orientation. The ambipolar carrier …
ultrathin single crystal silicon with the (100) surface orientation. The ambipolar carrier …