Flexible photodetectors based on 1D inorganic nanostructures

Z Lou, G Shen - Advanced Science, 2016 - Wiley Online Library
Flexible photodetectors with excellent flexibility, high mechanical stability and good
detectivity, have attracted great research interest in recent years. 1D inorganic …

InAs/GaSb Type‐II Superlattice Detectors

EA Plis - Advances in Electronics, 2014 - Wiley Online Library
InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …

Switchable unipolar‐barrier van der Waals heterostructures with natural anisotropy for full linear polarimetry detection

W Deng, M Dai, C Wang, C You, W Chen… - Advanced …, 2022 - Wiley Online Library
Polarization‐resolved photodetection in a compact footprint is of great interest for
ultraminiaturized polarimeters to be used in a wide range of applications. However, probing …

Ultra-thin infrared metamaterial detector for multicolor imaging applications

JA Montoya, ZB Tian, S Krishna, WJ Padilla - Optics express, 2017 - opg.optica.org
The next generation of infrared imaging systems requires control of fundamental
electromagnetic processes–absorption, polarization, spectral bandwidth–at the pixel level to …

Type-II superlattice infrared detectors

DZY Ting, A Soibel, L Höglund, J Nguyen… - Semiconductors and …, 2011 - Elsevier
Publisher Summary This chapter provides an overview of type-II superlattice infrared
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …

High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice

N Gautam, S Myers, AV Barve, B Klein… - Applied Physics …, 2012 - pubs.aip.org
We report on an interband cascade mid-wave infrared (MWIR) detector based on type-II
InAs/GaSb/AlSb strained layer superlattices (T2SL). The reported device has a seven-stage …

Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates

J Wu, Q Jiang, S Chen, M Tang, YI Mazur… - Acs …, 2016 - ACS Publications
High-performance, multispectral, and large-format infrared focal plane arrays are the long-
demanded third-generation infrared technique for hyperspectral imaging, infrared …

[HTML][HTML] Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

Y Aytac, BV Olson, JK Kim, EA Shaner… - Applied Physics …, 2014 - pubs.aip.org
Measurements of carrier recombination rates using a time-resolved pump-probe technique
are reported for mid-wave infrared InAs/InAs 1− x Sb x type-2 superlattices (T2SLs). By …

[HTML][HTML] Recent trends in 8–14 μm type-II superlattice infrared detectors

D Kwan, M Kesaria, EA Anyebe, D Huffaker - Infrared Physics & Technology, 2021 - Elsevier
Abstract Type-II superlattices (T2SLs) hold enormous potential for next-generation 8–14 μm
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …

Passivation techniques for InAs/GaSb strained layer superlattice detectors

EA Plis, MN Kutty, S Krishna - Laser & Photonics Reviews, 2013 - Wiley Online Library
Abstract InAs/(In, Ga) Sb Strained Layer Superlattices (SLSs) have made significant
progress since they were first proposed as an infrared (IR) sensing material more than three …