Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

Diamond/Si bonding interface with an entire contact area and high thermal stability is
achieved by surface activated bonding method. The fabrication of diamond field-effect …

Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal
diamond films attracts increasing attention for solid-state qubits applications. Here, we …

Diamond has two crystallographically inequivalent sites in the unit cell. In doped diamond,
dopant occupation in the two sites is expected to be equal. Nevertheless, preferential dopant …

The challenge of do** synthetic diamond with phosphorus stems from the atomic size
mismatch between phosphorus and carbon atoms, which previously hindered achieving …

A wide impurity do** range of p-and n-type diamond semiconductors will facilitate the
development of various electronics. This study focused on producing n-type diamond with …

Abstract n-Type diamond is commonly fabricated with phosphorus do** and chemical
vapor deposition (CVD). Phosphorus atoms form a deep donor level of 0.57 eV below the …

A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor
(MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma …

Semiconducting n-type diamond can be fabricated using phosphorus as a substitutional
donor dopant. The dopant activation energy level at 0.58 eV is deep. At high dopant …