Fan-out wafer-level packaging (FOWLP) of large chip with multiple redistribution layers (RDLs)
This study is for fan-out wafer-level packaging with chip-first (die face-up) formation. Chips
with Cu contact-pads on the front side and a die attach film on the backside are picked and …
with Cu contact-pads on the front side and a die attach film on the backside are picked and …
Monolithic integration of a silicon-based photonic transceiver in a CMOS process
AA González-Fernández, J Juvert… - IEEE Photonics …, 2015 - ieeexplore.ieee.org
This work presents the design, fabrication, and characterization of a monolithic and
complementary-metal–oxide–semiconductor (CMOS)-based integrated optical system …
complementary-metal–oxide–semiconductor (CMOS)-based integrated optical system …
Direct observation of Eu atoms in AlN lattice and the first‐principles simulations
LJ Yin, SH Zhang, H Wang, X Jian… - Journal of the …, 2019 - Wiley Online Library
Abstract Rare‐earth metal (Eu)‐doped aluminum nitride has potential application as
luminescence materials due to its unusual mechanical and physical properties, as well as …
luminescence materials due to its unusual mechanical and physical properties, as well as …
Improvement on the onset voltage for electroluminescent devices based in a SiOx/SiOy bilayer obtained by sputtering
ASL Salazar-Valdez, K Monfil-Leyva… - Materials Research …, 2024 - iopscience.iop.org
This work is focused on the composition, optical and electroluminescent properties of silicon
rich oxide (SiO x, x< 2) films monolayers and bilayers (SiO x/SiO y) deposited by Sputtering …
rich oxide (SiO x, x< 2) films monolayers and bilayers (SiO x/SiO y) deposited by Sputtering …
Electroluminescence from metal oxide thin films
Light emission from the amorphous Zr-doped HfO 2 high-k dielectric deposited by the
sputtering method has been studied. The broad band light including visible and near IR …
sputtering method has been studied. The broad band light including visible and near IR …
Europium location in the AlN: Eu green phosphor prepared by a gas-reduction-nitridation route
LJ Yin, QQ Zhu, W Yu, LY Hao, X Xu, FC Hu… - Journal of Applied …, 2012 - pubs.aip.org
Eu doped aluminum nitride phosphors were successfully synthesized by a novel gas-
reduction-nitridation route with a reaction temperature of 1400 C and a soaking time of 3 h …
reduction-nitridation route with a reaction temperature of 1400 C and a soaking time of 3 h …
Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
High optical power density of 0.5 mW/cm 2, external quantum efficiency of 0.1%, and
population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide …
population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide …
Multicolour lanthanide (iii) porous 1D coordination polymers: tunable wide spectrum emission and efficient Cu II sensing
Five isostructural 1D porous coordination polymers (PCPs) with a general formula of {[M
(L)(DMF)(H2O)]· 1.5 H2O} n [M= TbIII (1), EuIII (2), YbIII (3), NdIII (4) and ErIII (5)] have been …
(L)(DMF)(H2O)]· 1.5 H2O} n [M= TbIII (1), EuIII (2), YbIII (3), NdIII (4) and ErIII (5)] have been …
Excitation dependent photoluminescence study of Si-rich a-SiNx: H thin films
We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated
silicon nitride (a-SiN x: H) thin films of different compositions, using three different excitation …
silicon nitride (a-SiN x: H) thin films of different compositions, using three different excitation …
Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices
The combination of a SiO 2 electron accelerator layer with a silicon-rich nitride layer forming
a bilayer embedded in a metal-oxide-semiconductor structure has proved to enhance the …
a bilayer embedded in a metal-oxide-semiconductor structure has proved to enhance the …