Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the
mainstream writing operation of MTJs is based on electric current with high energy …

Abstract Magnetic Tunnel Junctions (MTJ) are employed in a range of technologies such as
data storage, sensing, and so on due to their compact nature and high field sensitivity. In …

Spintronic nano-oscillators and diodes with reduced nonlinearity benefit from low phase
noise and improved device properties. Moreover, they could offer key advantages for …

The impact of 400 keV Ar+ irradiation on the magnetic and electrical properties of in-plane
magnetized magnetic tunnel junction (MTJ) stacks was investigated by ferromagnetic …

This paper reports the first experimental demonstration of a new concept of double magnetic
tunnel junctions comprising a magnetically switchable assistance layer. These double …

Interfaces of ferromagnetic/organic material hybrid structures refer to the spin interface that
governs physical properties for achieving high spin polarization, low impedance mismatch …

In this study, the first-(K 1) and second-order (K 2) magnetic anisotropies are investigated as
a function of post-annealing temperature (T a) in Pt/Co/MgO heterostructures. We find that …

The writing performance of the easy-cone magnetic tunnel junction (MTJ) and
perpendicularly magnetized MTJ (pMTJ) under various temperatures was investigated …

In this work, we used the soft X-ray resonant magnetic reflectivity to study the depth-resolved
out-of-plane (oop) magnetization profile of a CoFeB/MgO sample with W/Ta cap layer after …

Spin-torque diodes (STDs) with interfacial perpendicular magnetic anisotropy (IPMA) in the
free layer (FL) demonstrate outstanding microwave signal rectification performances. Large …