III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

We report on DC and RF measurement results of AlScN/GaN high electron mobility
transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD) …

Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …

Molecular beam epitaxy of single-phase wurtzite N-polar Sc x Al 1− x N (x∼ 0.11–0.38) has
been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N …

Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …

Epitaxial Sc x Al 1− x N thin films of∼ 100 nm thickness grown on metal polar GaN
substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r) …

AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high
electron mobility transistors due to its large dielectric constant and polarization. The …

Transition metal nitrides, namely group 3 (Sc and Y) elements alloyed with AlN, are
predicted to enhance several characteristics of wurtzite semiconducting nitrides, thanks to …

Growth of AlScN high‐electron‐mobility transistor (HEMT) structures by metal–organic
chemical vapor deposition (MOCVD) is challenging due to the low vapor pressure of the …