Role of surface energy in nanowire growth
As research interest moves from micromaterials to nanomaterials and quantum structures,
the surface energy of the structures has an increasing impact on the nanomaterial growth …
the surface energy of the structures has an increasing impact on the nanomaterial growth …
Real-Time Study of Surface-Guided Nanowire Growth by In Situ Scanning Electron Microscopy
Surface-guided growth has proven to be an efficient approach for the production of nanowire
arrays with controlled orientations and their large-scale integration into electronic and …
arrays with controlled orientations and their large-scale integration into electronic and …
The synergic effect of atomic hydrogen adsorption and catalyst spreading on Ge nanowire growth orientation and kinking
Hydride precursors are commonly used for semiconductor nanowire growth from the vapor
phase and hydrogen is quite often used as a carrier gas. Here, we used in situ scanning …
phase and hydrogen is quite often used as a carrier gas. Here, we used in situ scanning …
Real-time observation of collector droplet oscillations during growth of straight nanowires
A liquid droplet sitting on top of a pillar is crucially important for semiconductor nanowire
growth via a vapor–liquid–solid (VLS) mechanism. For the growth of long and straight …
growth via a vapor–liquid–solid (VLS) mechanism. For the growth of long and straight …
Surface effects on the dual-mode vibration of< 1 1 0> silver nanowires with different cross-sections
Dual-mode vibration of nanowires (NWs) has been reported experimentally through
actuation of the NW at its resonance frequency, which is expected to open up a variety of …
actuation of the NW at its resonance frequency, which is expected to open up a variety of …
Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by
molecular beam epitaxy at the substrate temperature of∼ 180 C, which is compatible with …
molecular beam epitaxy at the substrate temperature of∼ 180 C, which is compatible with …
A little ribbing: Flux starvation engineering for rippled indium tin oxide nanotree branches
RT Tucker, AL Beaudry, JM LaForge… - Applied Physics …, 2012 - pubs.aip.org
Combining vapour-liquid-solid growth with glancing angle deposition (VLS-GLAD) facilitates
fabrication of branched nanowires not possible with either technique alone. Indium tin oxide …
fabrication of branched nanowires not possible with either technique alone. Indium tin oxide …
Catalyst–substrate interaction and growth delay in vapor–liquid–solid nanowire growth
M Kolíbal, T Pejchal, T Musálek, T Šikola - Nanotechnology, 2018 - iopscience.iop.org
Understanding of the initial stage of nanowire growth on a bulk substrate is crucial for the
rational design of nanowire building blocks in future electronic and optoelectronic devices …
rational design of nanowire building blocks in future electronic and optoelectronic devices …
Impact of nucleation conditions on diameter modulation of GaAs nanowires
SC Crawford, S Ermez, G Haberfehlner… - …, 2015 - iopscience.iop.org
Diameter-modulated nanowires can be used to impart unique properties to nanowire-based
devices. Here, diameter modulation along Au-seeded GaAs nanowires was achieved by …
devices. Here, diameter modulation along Au-seeded GaAs nanowires was achieved by …
Concurrent growth of Kirkendall pores and vapor–solid–solid protuberances on Ni wires during Mo vapor-phase deposition
C Wang, DC Dunand - Metallurgical and Materials Transactions A, 2014 - Springer
During vapor-phase deposition at 1273 K (1000° C), by pack cementation, of Mo onto 127-μ
m-diameter Ni wires, two phenomena are observed to occur concurrently, leading to strong …
m-diameter Ni wires, two phenomena are observed to occur concurrently, leading to strong …