This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Although silicon is a promising material for quantum computation, the degeneracy of the
conduction band minima (valleys) must be lifted with a splitting sufficient to ensure the …

The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two
interchangeable transport channels. One channel is used to form quantum dots, and the …

Electron spins confined to phosphorus donors in silicon are promising candidates as qubits
because of their long coherence times, exceeding seconds in isotopically purified bulk …

Once the periodic properties of elements were unveiled, chemical behaviour could be
understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum …

We report ground-and excited-state transport through an electrostatically defined few-hole
quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields …

The goal of this article is to review the progress of three-electron spin qubits from their
inception to the state of the art. We direct the main focus towards the exchange-only qubit …

Individual donors in silicon chips are used as quantum bits with extremely low error rates.
However, physical realizations have been limited to one donor because their atomic size …

We investigate the gate-induced onset of few-electron regime through the undoped channel
of a silicon nanowire field-effect transistor. By combining low-temperature transport …