[BUCH][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
A Mixed-Signal Approach Towards Linear and Efficient -Way Doherty Amplifiers
WCE Neo, J Qureshi, MJ Pelk… - IEEE Transactions …, 2007 - ieeexplore.ieee.org
A mixed-signal approach for the design and testing of high-performance N-way Doherty
amplifiers is introduced. In support of this, an analysis of N-way power-combining networks …
amplifiers is introduced. In support of this, an analysis of N-way power-combining networks …
Power-efficient design techniques for mm-wave hybrid/digital FDD/full-duplex MIMO transceivers
S Mondal, J Paramesh - IEEE Journal of Solid-State Circuits, 2020 - ieeexplore.ieee.org
This article describes system and circuit design techniques to enhance power efficiency and
incorporate new features in millimeter-wave multi-input-multi-output (MIMO) transceivers …
incorporate new features in millimeter-wave multi-input-multi-output (MIMO) transceivers …
Design and analysis of a 55–71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process
YN Jen, JH Tsai, TW Huang… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
A 55-71-GHz fully integrated power amplifier (PA) using a distributed active transformer
(DAT) is implemented in 90-nm RF/MS CMOS technology. The DAT combiner, featuring …
(DAT) is implemented in 90-nm RF/MS CMOS technology. The DAT combiner, featuring …
Highly linear high-power 802.11 ac/ax WLAN SiGe HBT power amplifiers with a compact 2nd-harmonic-shorted four-way transformer and a thermally compensating …
This article presents the design of a highly linear high-power silicon-germanium (SiGe)
heterojunction bipolar transistor (HBT) 802.11 ac/aχ wireless local area network (WLAN) …
heterojunction bipolar transistor (HBT) 802.11 ac/aχ wireless local area network (WLAN) …
Envelope-tracking CMOS power amplifier module for LTE applications
An envelope-tracking (ET) CMOS power amplifier (PA) is fabricated using a 0.18-μm CMOS
process. The module containing the supply modulator, the PA, and the output transformer is …
process. The module containing the supply modulator, the PA, and the output transformer is …
[BUCH][B] AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
J Kühn - 2011 - books.google.com
This work has arisen out of the strong demand for a superior power-added efficiency (PAE)
of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that …
of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that …
RF Characterization of SiGe HBT Power Amplifiers Under Load Mismatch
A Keerti, AVH Pham - IEEE transactions on microwave theory …, 2007 - ieeexplore.ieee.org
We present the RF characterization of silicon-germanium heterojunction bipolar transistor
(SiGe HBT) power amplifiers (PA) under load mismatched conditions. Experimental results …
(SiGe HBT) power amplifiers (PA) under load mismatched conditions. Experimental results …
Multi-band power amplifier
F **ghang, S Zheng, N Gebeyehu, Y Shi… - US Patent …, 2018 - Google Patents
Abstract Systems, devices and methods related to multi-band power amplifier. In some
embodiments, a power amplifier module includes a power amplifier having an output stage …
embodiments, a power amplifier module includes a power amplifier having an output stage …
A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
MP Van der Heijden, M Spirito… - IEEE MTT-S …, 2003 - ieeexplore.ieee.org
A 2GHz single-stage linear InGaP HBT differential driver amplifier is presented operating at
I/sub C/= 30mA and V/sub C/= 3V. The amplifier utilizes a collector-base capacitance …
I/sub C/= 30mA and V/sub C/= 3V. The amplifier utilizes a collector-base capacitance …