Energy-efficient transistors: suppressing the subthreshold swing below the physical limit
With the miniaturization of silicon-based electronic components, power consumption is
becoming a fundamental issue for micro–nano electronic circuits. The main reason for this is …
becoming a fundamental issue for micro–nano electronic circuits. The main reason for this is …
Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions
P Chava, Z Fekri, Y Vekariya, T Mikolajick… - Applied Physics …, 2023 - pubs.aip.org
Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that is
responsible for the electronic transport in devices like tunnel field effect transistors (TFETs) …
responsible for the electronic transport in devices like tunnel field effect transistors (TFETs) …
Source pocket-engineered hetero-gate dielectric SOI Tunnel FET with improved performance
In this paper, we have studied and proposed a planar Tunnel FET device with source side
SiGe pocket and hetero-gate dielectric structure that works by utilizing quantum mechanical …
SiGe pocket and hetero-gate dielectric structure that works by utilizing quantum mechanical …
Calibration of bulk trap-assisted tunneling and Shockley–Read–Hall currents and impact on InGaAs tunnel-FETs
Q Smets, AS Verhulst, E Simoen… - … on Electron Devices, 2017 - ieeexplore.ieee.org
The tunnel-FET (TFET) is a promising candidate for future low-power logic applications,
because it enables a sub-60-mV/decadesubthresholdswing. However, themost …
because it enables a sub-60-mV/decadesubthresholdswing. However, themost …
Experimental details of a steep-slope ferroelectric InGaAs tunnel-FET with high-quality PZT and modeling insights in the transient polarization
The steep-slope ferroelectric tunnel-FET (SS-FeTFET), consisting of an InGaAs TFET with a
sub-60 mV/dec subthreshold swing (SS) at room temperature and an externally connected …
sub-60 mV/dec subthreshold swing (SS) at room temperature and an externally connected …
Boosting the sensitivity of the nanopore field-effect transistor to translocating single molecules
Nano-scaling of metal-oxide-semiconductor (MOS) field-effect transistors (FETs) is exploited
to benefit the interdisciplinary field of single-molecule biosensing. While single-molecule …
to benefit the interdisciplinary field of single-molecule biosensing. While single-molecule …
Band-tails tunneling resolving the theory-experiment discrepancy in Esaki diodes
Discrepancies exist between the theoretically predicted and experimentally measured
performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect …
performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect …
An ultra-low-power black phosphorus (B-Ph)/Si heterojunction do**less-tunnel FET (HD-TFET) with enhanced electrical characteristics
The execution of two-dimensional (2D) layered material in the source-region of a silicon-
based tunnel field-effect transistors (TFETs) is proposed for ultra-low-power (ULP) …
based tunnel field-effect transistors (TFETs) is proposed for ultra-low-power (ULP) …
Signature of ballistic band-tail tunneling current in tunnel FET
To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we
theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in …
theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in …
Large variation in temperature dependence of band-to-band tunneling current in tunnel devices
The observation of a significant temperature-dependent variation in the IV characteristics of
tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated …
tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated …