[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Emerging memories: resistive switching mechanisms and current status
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …
attention for its application in non-volatile memory (NVM) devices, popularly described as …
Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices.
The CH3 NH3 PbI3-x Clx organic-inorganic hybrid perovskite material demonstrates
remarkable resistive switching behavior, which can be applicable in resistive random access …
remarkable resistive switching behavior, which can be applicable in resistive random access …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Progress in BiFeO 3-based heterostructures: materials, properties and applications
BiFeO3-based heterostructures have attracted much attention for potential applications due
to their room-temperature multiferroic properties, proper band gaps and ultrahigh …
to their room-temperature multiferroic properties, proper band gaps and ultrahigh …
Prospective of semiconductor memory devices: from memory system to materials
CS Hwang - Advanced Electronic Materials, 2015 - Wiley Online Library
The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining.
The conventional strategy for meeting such demand, ie shrinking of the memory cell size …
The conventional strategy for meeting such demand, ie shrinking of the memory cell size …
Perovskite‐based nanocrystals: synthesis and applications beyond solar cells
N Wang, W Liu, Q Zhang - Small Methods, 2018 - Wiley Online Library
The recent progress in perovskite nanocrystals, including synthetic methods and their
applications beyond solar cells, is discussed. Specifically, different synthetic routes to …
applications beyond solar cells, is discussed. Specifically, different synthetic routes to …
[LIVRE][B] Graphene science handbook, six-volume set
Graphene is the strongest material ever studied and can be an efficient substitute for silicon.
This six-volume handbook focuses on fabrication methods, nanostructure and atomic …
This six-volume handbook focuses on fabrication methods, nanostructure and atomic …
Influence of La3+ substitutions on structural, dielectric and electrical properties of spinel cobalt ferrite
M Kamran, M Anis-ur-Rehman - Ceramics International, 2023 - Elsevier
La 3+ doped cobalt ferrites with composition CoLa x Fe 2− x O 4 (0.00≤ x≤ 0.20) were
synthesized by a co-precipitation method. X-ray diffraction (XRD) analysis confirm the …
synthesized by a co-precipitation method. X-ray diffraction (XRD) analysis confirm the …
Mechanism of nonvolatile resistive switching in graphene oxide thin films
The mechanism of the resistive switching (RS) effect in graphene oxide (GO) thin films
prepared by the vacuum filtration method has been investigated by macroscopic current …
prepared by the vacuum filtration method has been investigated by macroscopic current …