In this review paper we will report the current state of research regarding the do** of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …

An overview of the important defect types, their origins and interactions during the bulk
crystal growth from the melt and selected epitaxial processes is given. The equilibrium and …

Reduction in compensation in Si-doped Al-rich AlGaN is demonstrated via chemical
potential control (CPC). The chemical potentials and the resulting formation energies of …

Highly conductive AlGaN alloys hold a great technological potential, wherein the
degenerate n-type do** is key in reducing parasitic resistances in electronic and opto …

We report on the material challenges of the growth of highly conductive n-AlGaN in
germicidal ultraviolet light emitting diodes (GUV LEDs), with the degradation of the surface …

In this work, we compare the defect structure in unintentionally doped and Si-doped AlN
layers grown by metalorganic vapor phase epitaxy (MOVPE) on high-temperature annealed …

A huge acceleration of the yellow band defect luminescence (YB) with increasing Si and Ge
do** concentration in GaN layers has been observed and studied. The donor do** …

Effective control of dislocation climb is of fundamental interest and practical importance in
tuning the mechanical and electronic properties of semiconductors. However, it remains a …

The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is
analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates …

We report on electrostatic screening of polarization-induced internal electric fields in
AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded …