Photoluminescence study of porous p-type silicon: Identification of radiative transitions
CF Ramirez-Gutierrez, A Medina-Herrera… - Journal of …, 2018 - Elsevier
The research discussed in this paper focused on a systematic methodology to elucidate the
controversy about transitions responsible for the photoluminescence (PL) spectrum from …
controversy about transitions responsible for the photoluminescence (PL) spectrum from …
Effects of wetting layer on exciton binding energy of strained CdTe/ZnTe pyramidal quantum dots
Abstract Effects of wetting layer on exciton binding energy of strained Cd 1− x Zn x Te/ZnTe
pyramidal quantum-dots (QDs) are theoretically studied by using an eight-band strain …
pyramidal quantum-dots (QDs) are theoretically studied by using an eight-band strain …
Dependence of heavy hole exciton binding energy and the strain distribution in GaAs1− xBix/GaAs finite spherical quantum dots on Bi content in the material
The ground state binding energy of heavy hole excitons confined in GaAs 1− x Bi x/GaAs
spherical quantum dots is calculated as a function of dot radius and the Bi content using a …
spherical quantum dots is calculated as a function of dot radius and the Bi content using a …
Quantification of the effects of misfit strain on the energy states of zinc-blende spherical core/shell quantum dots
The effects of lattice-mismatched strain on the optical properties of type-I core/shell quantum
dot nanostructures are investigated theoretically using the simple continuum elasticity and …
dot nanostructures are investigated theoretically using the simple continuum elasticity and …
The application of Hartree approximation in exciton recombination energy for conical InAs/GaAs quantum dots
W Yao, Z Yu, Y Liu, B Jia - Journal of Nanoscience and …, 2010 - ingentaconnect.com
Under the framework of the Hartree approximation, the ground state exciton binding energy
and the interband transition energy are calculated by solving the coupled Schrodinger …
and the interband transition energy are calculated by solving the coupled Schrodinger …
Study of temperature and indium concentration-dependent dielectric constant and electron affinity effects on the exciton optical transition and binding energy in …
R Sánchez-Cano, N Porras-Montenegro - Physica E: Low-dimensional …, 2010 - Elsevier
We have study the heavy-hole exciton states in GaSb–GaInAsSb–GaSb type-I spherical
Quantum Dots, using temperature-dependent static dielectric constant and electron affinity …
Quantum Dots, using temperature-dependent static dielectric constant and electron affinity …
Optimización de los parámetros de crecimiento de la heteroestructura GaSb/GaInAsSb/GaSb fabricada por la técnica de epitaxia en fase líquida
JF Gómez Cortés - 2013 - bdigital.uniquindio.edu.co
Resumen en español El crecimiento de una estructura cristalina epitaxial haciendo uso de
la técnica de Epitaxia en Fase Líquida (EFL) se puede desglosar en tres componentes …
la técnica de Epitaxia en Fase Líquida (EFL) se puede desglosar en tres componentes …