Nanomechanical resonators: toward atomic scale

B Xu, P Zhang, J Zhu, Z Liu, A Eichler, XQ Zheng… - Acs Nano, 2022 - ACS Publications
The quest for realizing and manipulating ever smaller man-made movable structures and
dynamical machines has spurred tremendous endeavors, led to important discoveries, and …

Non-van der Waals quasi-2D materials; recent advances in synthesis, emergent properties and applications

AP Balan, AB Puthirath, S Roy, G Costin, EF Oliveira… - Materials Today, 2022 - Elsevier
The discovery of novel materials that are stable at ambient conditions with emergent
functionalities is a pressing need of the 21st century to keep the pace of social and …

Universal assembly of liquid metal particles in polymers enables elastic printed circuit board

W Lee, H Kim, I Kang, H Park, J Jung, H Lee, H Park… - Science, 2022 - science.org
An elastic printed circuit board (E-PCB) is a conductive framework used for the facile
assembly of system-level stretchable electronics. E-PCBs require elastic conductors that …

Aqueous‐Printed Ga2O3 Films for High‐Performance Flexible and Heat‐Resistant Deep Ultraviolet Photodetector and Array

M Ding, K Liang, S Yu, X Zhao, H Ren… - Advanced Optical …, 2022 - Wiley Online Library
High deep‐ultraviolet (DUV) sensitivity and excellent flexibility of ultrathin gallium oxide
(Ga2O3) film with an ultrawide bandgap endow its extreme propensity in flexible DUV …

Diffusion of dopants and impurities in β-Ga2O3

R Sharma, ME Law, F Ren, AY Polyakov… - Journal of Vacuum …, 2021 - pubs.aip.org
The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …

2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

M Labed, JY Moon, SI Kim, JH Park, JS Kim… - ACS …, 2024 - ACS Publications
Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have
significantly enhanced the functionality of electronic and optoelectronic devices, particularly …

Heterogeneous integration of diamond

OA Williams, S Mandal, JA Cuenca - Accounts of Materials …, 2024 - ACS Publications
Conspectus The heterogeneous integration of materials offers new paradigms in many
extreme applications, where single materials cannot solve the problem alone. Diamond has …

[HTML][HTML] A perspective on β-Ga2O3 micro/nanoelectromechanical systems

XQ Zheng, H Zhao, PXL Feng - Applied Physics Letters, 2022 - pubs.aip.org
Beta gallium oxide (b-Ga2O3) is an emerging ultrawide bandgap ($4.8 eV) semiconductor
with attractive properties for future power and radio frequency (RF) electronics …

[HTML][HTML] Reduced thermal resistance of amorphous Al2O3 thin films on β-Ga2O3 and amorphous SiO2 substrates via rapid thermal annealing

HT Aller, AJH McGaughey, JA Malen - Applied Physics Letters, 2023 - pubs.aip.org
The impact of rapid thermal annealing (1000 C for 1 min) on the thermal transport properties
of amorphous alumina (a-Al 2 O 3) thin films grown by atomic layer deposition on β− Ga 2 O …

Raman Spectroscopic Characterization of Chemical Bonding and Phase Segregation in Tin (Sn)-Incorporated Ga2O3

D Das, G Gutierrez, CV Ramana - ACS omega, 2023 - ACS Publications
Using detailed Raman scattering analyses, the effect of tin (Sn) incorporation on the crystal
structure, chemical bonding/inhomogeneity, and single-phase versus multiphase formation …