Dielectric surface passivation for silicon solar cells: A review

RS Bonilla, B Hoex, P Hamer… - physica status solidi …, 2017 - Wiley Online Library
Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many
places are now providing a substantial portion of electricity generation. Further adoption of …

Review of laser do** and its applications in silicon solar cells

M Vaqueiro-Contreras, B Hallam… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
Laser-doped selective emitter diffusion techniques have become mainstream in solar cell
manufacture covering 60% of the market share in 2022 and are expected to continue to …

p-type c-Si solar cells based on rear side laser processing of Al2O3/SiCx stacks

P Ortega, I Martín, G Lopez, M Colina, A Orpella… - Solar Energy Materials …, 2012 - Elsevier
In this work, we further investigate a new strategy to passivate and contact the rear side of p-
type c-Si solar cells based on the laser processing of aluminum oxide (Al2O3)/amorphous …

[HTML][HTML] Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

G López, PR Ortega, C Voz, I Martín… - Beilstein Journal of …, 2013 - beilstein-journals.org
The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon
carbide (Al 2 O 3/a-SiC x) stacks on both p-type and n-type crystalline silicon (c-Si) …

Large area p-type PERL cells featuring local p+ BSF formed by laser processing of ALD Al2O3 layers

E Cornagliotti, A Uruena, B Hallam, L Tous… - Solar Energy Materials …, 2015 - Elsevier
In this work we present large area p-type PERL solar cells featuring local p+ Back-Surface-
Field (BSF) obtained by pico-second (ps) laser processing of thin ALD Al 2 O 3 layers …

Efficiency Potential of P-Type Al2O3/SiN Passivated PERC Solar Cells With Locally Laser-Doped Rear Contacts

M Ernst, D Walter, A Fell, B Lim… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
Technological restrictions on the screen-printed rear-contact feature size on the order of 100
μm are among the limiting factors of the efficiency of p-type passivated emitter rear-contact …

“Cold” process for IBC c-Si solar cells fabrication

G López, PR Ortega, I Martín, C Voz, A Orpella… - Energy Procedia, 2016 - Elsevier
In this work we have developed an innovative fabrication process of n-type interdigitated
back contact (IBC) c-Silicon solar cells. The main feature is that all the highly-doped regions …

Development and characterization of AlOx/SiNx: B layer systems for surface passivation and local laser do**

MH Norouzi, P Saint-Cast, U Jaeger… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
This work aims to improve the rear-side properties of p-type monocrystalline silicon solar
cells by using the passivated emitter and rear locally diffused (PERL) solar cell concept. To …

Towards 90% bifaciality for p-type Cz-Si solar cells by adaption of industrial PERC processes

E Lohmüller, SL nèe Werner… - 2018 IEEE 7th World …, 2018 - ieeexplore.ieee.org
We demonstrate a bifaciality of 88.0% for 6-inch bifacial p-type Cz-Si passivated emitter and
rear cells (biPERC) and increase their rear side energy conversion efficiency to 18.0% by …

Low-temperature laser generated ultrathin aluminum oxide layers for effective c-Si surface passivation

P Fan, Z Sun, GC Wilkes, MC Gupta - Applied Surface Science, 2019 - Elsevier
In this paper, we propose and experimentally demonstrate a new laser processing method
for low-temperature formation of effective aluminum oxide passivation layers on crystalline …