Systems and methods for improved semiconductor etching and component protection
TF Tan, LK Loh, D Lubomirsky, J Soonwook… - US Patent …, 2019 - Google Patents
Semiconductor systems and methods may include a semiconductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The …
having a gas box defining an access to the semiconductor processing chamber. The …
Systems and methods for improved semiconductor etching and component protection
TF Tan, LK Loh, D Lubomirsky, J Soonwook… - US Patent …, 2019 - Google Patents
Semiconductor systems and methods may include a semi conductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The cham …
having a gas box defining an access to the semiconductor processing chamber. The cham …
Methods and systems to enhance process uniformity
3, 969077 4006047 4, 190488 4.209. 357 4,214,946 4, 232060 4.234. 628 4,265.943
4,340,462 4,341,592 4,361,418 4,364,803 4,368.223 4, 374698 4,381,441 4,397,812 …
4,340,462 4,341,592 4,361,418 4,364,803 4,368.223 4, 374698 4,381,441 4,397,812 …
Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
R Batzer, H Qiu, B Varadarajan, PG Breiling… - US Patent …, 2020 - Google Patents
(57) ABSTRACT A substrate processing system includes a first chamber including a
substrate support. A showerhead is arranged above the first chamber and is configured to …
substrate support. A showerhead is arranged above the first chamber and is configured to …
Spacer formation
O Luere, SS Kang, SD Nemani - US Patent 9,269,590, 2016 - Google Patents
Embodiments of the present invention pertain to methods of forming more symmetric
spacers which may be used for self-aligned multi-patterning processes. A conformal spacer …
spacers which may be used for self-aligned multi-patterning processes. A conformal spacer …
Oxide and metal removal
X Wang, J Liu, A Wang, NK Ingle, JW Anthis… - US Patent …, 2016 - Google Patents
Methods are described herein for etching metal films which are difficult to volatize. The
methods include exposing a metal film to a chlorine-containing precursor (eg Cl). Chlo rine …
methods include exposing a metal film to a chlorine-containing precursor (eg Cl). Chlo rine …
Low temperature gas-phase carbon removal
CM Hsu, NK Ingle, H Hamana, A Wang - US Patent 9,378,969, 2016 - Google Patents
(57) ABSTRACT A methodofetching carbon films on patterned heterogeneous structures is
described and includes a gas phase etch using remote plasma excitation. The remote …
described and includes a gas phase etch using remote plasma excitation. The remote …
Procedure for etch rate consistency
J Zhang, H Zhang - US Patent 9,245,762, 2016 - Google Patents
4,006,047 4,209,357 4,214,946 4,232,060 4,234.628 4,265,943 4,364,803 4,368,223
4,397,812 4,468.413 4,565,601 4,571,819 4,579,618 4,585,920 4,625,678 4,632,857 …
4,397,812 4,468.413 4,565,601 4,571,819 4,579,618 4,585,920 4,625,678 4,632,857 …
Dual-channel showerhead with improved profile
D Lubomirsky - US Patent 10,546,729, 2020 - Google Patents
Described processing chambers may include a chamber housing at least partially defining
an interior region of the semiconductor processing chamber. The chambers may include a …
an interior region of the semiconductor processing chamber. The chambers may include a …
Gas distribution apparatus and substrate processing apparatus including same
YK Han, Y Seo, SK Min, LEE Jun-Hyeok… - US Patent App. 14 …, 2015 - Google Patents
Provided is a gas distribution apparatus including first and second regions vertically
separated therein. In the first region, a first process gas Supplied to the first region from the …
separated therein. In the first region, a first process gas Supplied to the first region from the …