GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …
methods used for the study of the deep levels in GaN-based high-electron mobility …
[LLIBRE][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
This paper presents an extensive investigation of the properties of the trap with activation
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered
promising candidates for power devices due to their superior advantages of high current …
promising candidates for power devices due to their superior advantages of high current …
A physics-based approach to model hot-electron trap** kinetics in p-GaN HEMTs
Hot electron trap** can significantly modify the performance of GaN-based HEMTs during
hard switching operation. In this letter, we present a physics-based model based on rate …
hard switching operation. In this letter, we present a physics-based model based on rate …
On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates
In this article, threading dislocations and its impact on the electrical and thermal
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes
This work describes an experiment on degradation mechanisms of InGaN light-emitting
diode (LED) test structures which do not fulfill the requirements of longlife products. We …
diode (LED) test structures which do not fulfill the requirements of longlife products. We …
Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes
M Meneghini, M la Grassa, S Vaccari, B Galler… - Applied Physics …, 2014 - pubs.aip.org
This paper presents an extensive investigation of the deep levels related to non-radiative
recombination in InGaN/GaN light-emitting diodes (LEDs). The study is based on combined …
recombination in InGaN/GaN light-emitting diodes (LEDs). The study is based on combined …