Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to
achieve low-power intelligent devices. To realize NC, researchers investigate various types …

A magnetic heterostructure with good thermal stability, large dam**‐like spin–obit torque
(DL‐SOT), and low power consumption is crucial to realize thermally stable, fast, and …

Realizing robust field-free current-induced switching of perpendicular magnetization is of
utmost importance to make spin–orbit torque (SOT) magnetic random-access memory …

Spin-orbit torque (SOT)-induced magnetization switching can be explained by either a
single-domain coherent switching scenario or a domain-wall dynamics scenario, depending …

Spin-orbit torques (SOTs) from transition metal dichalcogenide systems (TMDs) in
conjunction with ferromagnetic materials are recently found to be attractive in spintronics for …

The Weyl semimetal Co 2 MnGa (CMG) has recently attracted significant attention in the field
of condensed matter physics because of its unique topological features along with the …

As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great
interest as the next-generation low-power and high-speed on-chip cache memory …

Current-induced spin–orbit torque (SOT) facilitates the ultrafast electrical manipulation of
magnetic tunnel junction (MTJ), which is a leading non-volatile technology for the …

We demonstrate the spin–orbit torque (SOT) induced perpendicular magnetization switching
in an annealed W/CoFeB/Zr/MgO multilayer with high thermal stability. It is found that the …

Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving
neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in a heavy …