Prospects and applications of on-chip lasers

Z Zhou, X Ou, Y Fang, E Alkhazraji, R Xu, Y Wan… - Elight, 2023 - Springer
Integrated silicon photonics has sparked a significant ramp-up of investment in both
academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart …

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

E Tournié, L Monge Bartolome, M Rio Calvo… - Light: Science & …, 2022 - nature.com
There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for develo** a variety of smart, compact, sensors based on Si-photonics …

[HTML][HTML] Perspective on the future of silicon photonics and electronics

C **ang, SM Bowers, A Bjorlin, R Blum… - Applied Physics …, 2021 - pubs.aip.org
Silicon photonics is advancing rapidly in performance and capability with multiple fabrication
facilities and foundries having advanced passive and active devices, including modulators …

Silicon photonics for high-capacity data communications

Y Shi, Y Zhang, Y Wan, Y Yu, Y Zhang, X Hu… - Photonics …, 2022 - opg.optica.org
In recent years, optical modulators, photodetectors,(de) multiplexers, and heterogeneously
integrated lasers based on silicon optical platforms have been verified. The performance of …

Perspectives on advances in quantum dot lasers and integration with Si photonic integrated circuits

C Shang, Y Wan, J Selvidge, E Hughes, R Herrick… - ACS …, 2021 - ACS Publications
Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …

High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process

H Kim, Y Liu, K Lu, CS Chang, D Sung, M Akl… - Nature …, 2023 - nature.com
Layer transfer techniques have been extensively explored for semiconductor device
fabrication as a path to reduce costs and to form heterogeneously integrated devices. These …

High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters

C Shang, E Hughes, Y Wan, M Dumont, R Koscica… - Optica, 2021 - opg.optica.org
Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-
cost and high-functionality photonic integrated circuits. Historically, high temperature …

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

C Shang, K Feng, ET Hughes, A Clark… - Light: Science & …, 2022 - nature.com
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via
direct epitaxial growth is a promising solution for on-chip light sources. Recent …

Review of highly mismatched III-V heteroepitaxy growth on (001) silicon

Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …

Heteroepitaxial growth of III-V semiconductors on silicon

JS Park, M Tang, S Chen, H Liu - Crystals, 2020 - mdpi.com
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …