The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …

Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …

This review discusses recent advances and future research priorities in the transition-metal
dichalcogenide (TMD) field. While the community has witnessed tremendous advances …

Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …

Reconfigurable logic and neuromorphic devices are crucial for the development of high-
performance computing. However, creating reconfigurable devices based on conventional …

Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …