Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …

An upperpart of a SIC substrate 1 is oxidized at a temperature of 800 to 1400 C., inclusive, in
an oxygen atmosphere at 1.4 x10 Pa or less, thereby forming a first insulating film 2 which is …

Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation
of SiC may inevitably lead to defect creation, the idea is to form the interface without …

An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O2, N2O,
and NO reveals that the dominant positive effect of nitridation is due to a significant reduction …

Wide band gap semiconductors, and in particular silicon carbide (4H‐SiC) and gallium
nitride (GaN), are very promising materials for the next generation of power electronics, to …

From the viewpoint of application in power electronics, SiC possesses the greatest
advantage of having SiO 2 as its native oxide. Unfortunately, the usual thermal oxidation …

Comparative analysis of the electronic structure of thermally oxidized surfaces of silicon and
silicon carbide indicates that in both cases the fundamental (bulk-band-related) spectrum of …