Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

We discuss molecular-dynamics simulations of ion damage in silicon, with emphasis on the
effects of ion mass and energy. We employ the Stillinger-Weber potential for silicon, suitably …

ABSTRACT A model is presented and analyzed for the dynamics of intrinsic point defects,
vacancies, and self-interstitials, in single-crystal silicon. Computations and asymptotic …

4 ″, 6 ″and 8 ″Cz crystals were grown with different heat shields which protect the
growing crystals against radiation emitted from the melt surface and hot graphite parts …

The ring diameter of ring-like distributed oxidation induced stacking faults (OSF) in
Czochralski grown silicon crystals has been investigated as a function of pull rate and the …

A review is made of the role of mathematics in the field of chemical engineering in the latter
half of the twentieth century. The beginning of this era was marked by the concerted effort of …

During the growth of float-zoning (FZ) and Czochralski (CZ) Si crystals, the temperature
distributions from the growth interface were measured using a two-color infrared …

Some of the recent advances that have been made by chemical engineers in the field of
statistical mechanics, as well as some of the new products and processes that have resulted …

We have determined the set of the diffusion coefficients (Dv: vacancies, Di: self-interstitials)
and equilibrium concentrations (Ceqv: vacancies, Ceqi: self-interstitials) of point defects …

Oxygen-and nitrogen-doped floating zone (FZ) crystals were investigated with regard to
radial oxygen precipitation, D-defect formation and gate oxide integrity (GOI) behavior as a …