Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

Topological spin textures in magnetic materials and arrangements of electric dipoles in
ferroelectrics are considered to be promising candidates for next-generation information …

The charged domain wall is an ultrathin (typically nanosized) interface between two
domains; it carries bound charge owing to a change of normal component of spontaneous …

Multiferroics are materials combining several ferroic orders, such as ferroelectricity, ferro-(or
antiferro-) magnetism, ferroelasticity and ferrotoroidicity. They are of interest both from a …

Abstract Domain walls in ferroelectric semiconductors show promise as multifunctional two-
dimensional elements for next-generation nanotechnology. Electric fields, for example, can …

The secondary nature of polarization in improper ferroelectrics promotes functional
properties beyond those of conventional ferroelectrics. In technologically relevant ultrathin …

Hexagonal rare-earth manganites and ferrites are well-known improper ferroelectrics with
low-temperature antiferromagnetism/weak ferromagnetism. In recent decades, new multi …

Ferroelectric domain walls are a completely new type of functional interface, which have the
potential to revolutionize nanotechnology. In addition to the emergent phenomena at …

Ferroelectric domain walls are quasi‐2D systems that show great promise for the
development of nonvolatile memory, memristor technology, and electronic components with …