Electron holography: Phase imaging with nanometer resolution

MR McCartney, DJ Smith - Annu. Rev. Mater. Res., 2007 - annualreviews.org
Electron holography provides a unique phase-imaging approach for characterizing
nanoscale electrostatic and magnetic fields. From the relative phase shifts of the electron …

Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

KO Davis, MP Rodgers, G Scardera, RP Brooker… - … and Sustainable Energy …, 2016 - Elsevier
This article is the second article in a three-part series dedicated to reviewing each process
step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock …

Accuracy and resolution limits of Kelvin probe force microscopy

U Zerweck, C Loppacher, T Otto, S Grafström… - Physical Review B …, 2005 - APS
Kelvin probe force microscopy is a scanning probe technique capable of map** the local
surface potential or work function on various surfaces with high spatial resolution. This …

Advances in AFM for the electrical characterization of semiconductors

RA Oliver - Reports on Progress in Physics, 2008 - iopscience.iop.org
Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

A secure camouflaged threshold voltage defined logic family

B Erbagci, C Erbagci, NEC Akkaya… - 2016 IEEE International …, 2016 - ieeexplore.ieee.org
A myriad of security vulnerabilites can be exposed via the reverse engineering of the
integrated circuits contained in electronics systems. The goal of IC reverse engineering is to …

Quantitative dopant profiling in semiconductors: a Kelvin probe force microscopy model

C Baumgart, M Helm, H Schmidt - Physical Review B—Condensed Matter and …, 2009 - APS
Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between
a conductive probe and nanostructured Si with shallow or buried selectively doped regions …

How multi-threshold designs can protect analog IPs

A Ash-Saki, S Ghosh - 2018 IEEE 36th International …, 2018 - ieeexplore.ieee.org
Analog Integrated Circuits (ICs) are one of the top targets for counterfeiting. However, the
security of analog Intellectual Property (IP) is not well investigated as its digital counterpart …

[HTML][HTML] 3D to 2D perspectives-Traditional and new do** and metrology challenges at the nanoscale

M Georgieva, N Petkov, R Duffy - Materials Science in Semiconductor …, 2023 - Elsevier
In this perspectives paper we will explore the do** state-of-the-art as it evolves for 3D to
2D structures and materials, and the following impact on the metrology methods needed to …

Nanometer-scale electronic and microstructural properties of grain boundaries in Cu (In, Ga) Se2

S Sadewasser, D Abou-Ras, D Azulay, R Baier… - Thin Solid Films, 2011 - Elsevier
Despite many recent research efforts, the influence of grain boundaries (GBs) on device
properties of CuIn1− xGaxSe2 solar cells is still not fully understood Here, we present a …

Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy

S Yoshida, Y Kanitani, R Oshima, Y Okada… - Physical review …, 2007 - APS
The do** characteristics and carrier transport in a GaAs pn junction were visualized with
a∼ 10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The …