Electron holography: Phase imaging with nanometer resolution
MR McCartney, DJ Smith - Annu. Rev. Mater. Res., 2007 - annualreviews.org
Electron holography provides a unique phase-imaging approach for characterizing
nanoscale electrostatic and magnetic fields. From the relative phase shifts of the electron …
nanoscale electrostatic and magnetic fields. From the relative phase shifts of the electron …
Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing
This article is the second article in a three-part series dedicated to reviewing each process
step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock …
step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock …
Accuracy and resolution limits of Kelvin probe force microscopy
U Zerweck, C Loppacher, T Otto, S Grafström… - Physical Review B …, 2005 - APS
Kelvin probe force microscopy is a scanning probe technique capable of map** the local
surface potential or work function on various surfaces with high spatial resolution. This …
surface potential or work function on various surfaces with high spatial resolution. This …
Advances in AFM for the electrical characterization of semiconductors
RA Oliver - Reports on Progress in Physics, 2008 - iopscience.iop.org
Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …
principal application in the determination of surface topography. However, the use of the …
A secure camouflaged threshold voltage defined logic family
A myriad of security vulnerabilites can be exposed via the reverse engineering of the
integrated circuits contained in electronics systems. The goal of IC reverse engineering is to …
integrated circuits contained in electronics systems. The goal of IC reverse engineering is to …
Quantitative dopant profiling in semiconductors: a Kelvin probe force microscopy model
Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between
a conductive probe and nanostructured Si with shallow or buried selectively doped regions …
a conductive probe and nanostructured Si with shallow or buried selectively doped regions …
How multi-threshold designs can protect analog IPs
Analog Integrated Circuits (ICs) are one of the top targets for counterfeiting. However, the
security of analog Intellectual Property (IP) is not well investigated as its digital counterpart …
security of analog Intellectual Property (IP) is not well investigated as its digital counterpart …
[HTML][HTML] 3D to 2D perspectives-Traditional and new do** and metrology challenges at the nanoscale
In this perspectives paper we will explore the do** state-of-the-art as it evolves for 3D to
2D structures and materials, and the following impact on the metrology methods needed to …
2D structures and materials, and the following impact on the metrology methods needed to …
Nanometer-scale electronic and microstructural properties of grain boundaries in Cu (In, Ga) Se2
Despite many recent research efforts, the influence of grain boundaries (GBs) on device
properties of CuIn1− xGaxSe2 solar cells is still not fully understood Here, we present a …
properties of CuIn1− xGaxSe2 solar cells is still not fully understood Here, we present a …
Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy
S Yoshida, Y Kanitani, R Oshima, Y Okada… - Physical review …, 2007 - APS
The do** characteristics and carrier transport in a GaAs pn junction were visualized with
a∼ 10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The …
a∼ 10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The …