Degradation of crystalline silicon due to boron–oxygen defects
This paper gives an overview on the current understanding of a technologically relevant
defect group in crystalline silicon related to the presence of boron and oxygen. It is …
defect group in crystalline silicon related to the presence of boron and oxygen. It is …
Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
A key strategy for further reducing the cost of solar electricity is through the development and
production of very-high efficiency silicon solar cells (> 25%). The challenge in achieving this …
production of very-high efficiency silicon solar cells (> 25%). The challenge in achieving this …
Engineering Solutions and Root-Cause Analysis for Light-Induced Degradation in p-Type Multicrystalline Silicon PERC Modules
K Nakayashiki, J Hofstetter… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
We identify two engineering solutions to mitigate light-induced degradation (LID) in p-type
multicrystalline silicon passivated emitter and rear cells, including modification of …
multicrystalline silicon passivated emitter and rear cells, including modification of …
Understanding the light‐induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p‐type silicon
This paper discusses degradation phenomena in crystalline silicon. We present new
investigations of the light‐and elevated temperature‐induced degradation of multicrystalline …
investigations of the light‐and elevated temperature‐induced degradation of multicrystalline …
[HTML][HTML] Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
In this paper, we present new insight in the degradation and subsequent recovery of charge
carrier lifetime upon light soaking at 75 C observed in float-zone silicon wafers. Variations of …
carrier lifetime upon light soaking at 75 C observed in float-zone silicon wafers. Variations of …
Influence of dopant elements on degradation phenomena in B‐and Ga‐doped Czochralski‐grown silicon
The response of lifetime samples made from boron‐and gallium‐doped Czochralski‐grown
silicon from the same producer to light‐and elevated temperature‐induced degradation …
silicon from the same producer to light‐and elevated temperature‐induced degradation …
Lifetime spectroscopy investigation of light-induced degradation in p-type multicrystalline silicon PERC
When untreated, light-induced degradation (LID) of p-type multicrystalline silicon (mc-Si)-
based passivated emitter and rear cell (PERC) modules can reduce power output by up to …
based passivated emitter and rear cell (PERC) modules can reduce power output by up to …
Correlation study between LeTID defect density, hydrogen and firing profile in Ga-doped crystalline silicon
J Simon, R Fischer-Süßlin, R Zerfaß… - Solar Energy Materials …, 2023 - Elsevier
Light-and elevated Temperature-induced Degradation (LeTID) remains a challenge for the
long-term stability of silicon-based solar cells. Despite numerous publications and studies …
long-term stability of silicon-based solar cells. Despite numerous publications and studies …
[HTML][HTML] Evaluating root cause: The distinct roles of hydrogen and firing in activating light-and elevated temperature-induced degradation
The root cause of light-and elevated temperature-induced degradation (LeTID) in
multicrystalline silicon p-type passivated emitter and rear cell (PERC) devices is still …
multicrystalline silicon p-type passivated emitter and rear cell (PERC) devices is still …
Evolution of LeTID defects in p-type multicrystalline silicon during degradation and regeneration
While progress has been made in develo** engineering solutions and understanding light-
and elevated temperature-induced degradation (LeTID) in p-type multicrystalline silicon (mc …
and elevated temperature-induced degradation (LeTID) in p-type multicrystalline silicon (mc …