Degradation of crystalline silicon due to boron–oxygen defects

T Niewelt, J Schön, W Warta, SW Glunz… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
This paper gives an overview on the current understanding of a technologically relevant
defect group in crystalline silicon related to the presence of boron and oxygen. It is …

Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review

FE Rougieux, C Sun, D Macdonald - Solar Energy Materials and Solar …, 2018 - Elsevier
A key strategy for further reducing the cost of solar electricity is through the development and
production of very-high efficiency silicon solar cells (> 25%). The challenge in achieving this …

Engineering Solutions and Root-Cause Analysis for Light-Induced Degradation in p-Type Multicrystalline Silicon PERC Modules

K Nakayashiki, J Hofstetter… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
We identify two engineering solutions to mitigate light-induced degradation (LID) in p-type
multicrystalline silicon passivated emitter and rear cells, including modification of …

Understanding the light‐induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p‐type silicon

T Niewelt, F Schindler, W Kwapil… - Progress in …, 2018 - Wiley Online Library
This paper discusses degradation phenomena in crystalline silicon. We present new
investigations of the light‐and elevated temperature‐induced degradation of multicrystalline …

[HTML][HTML] Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon

T Niewelt, M Selinger, NE Grant, W Kwapil… - Journal of Applied …, 2017 - pubs.aip.org
In this paper, we present new insight in the degradation and subsequent recovery of charge
carrier lifetime upon light soaking at 75 C observed in float-zone silicon wafers. Variations of …

Influence of dopant elements on degradation phenomena in B‐and Ga‐doped Czochralski‐grown silicon

W Kwapil, J Dalke, R Post, T Niewelt - Solar RRL, 2021 - Wiley Online Library
The response of lifetime samples made from boron‐and gallium‐doped Czochralski‐grown
silicon from the same producer to light‐and elevated temperature‐induced degradation …

Lifetime spectroscopy investigation of light-induced degradation in p-type multicrystalline silicon PERC

AE Morishige, MA Jensen… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
When untreated, light-induced degradation (LID) of p-type multicrystalline silicon (mc-Si)-
based passivated emitter and rear cell (PERC) modules can reduce power output by up to …

Correlation study between LeTID defect density, hydrogen and firing profile in Ga-doped crystalline silicon

J Simon, R Fischer-Süßlin, R Zerfaß… - Solar Energy Materials …, 2023 - Elsevier
Light-and elevated Temperature-induced Degradation (LeTID) remains a challenge for the
long-term stability of silicon-based solar cells. Despite numerous publications and studies …

[HTML][HTML] Evaluating root cause: The distinct roles of hydrogen and firing in activating light-and elevated temperature-induced degradation

MA Jensen, A Zuschlag, S Wieghold… - Journal of Applied …, 2018 - pubs.aip.org
The root cause of light-and elevated temperature-induced degradation (LeTID) in
multicrystalline silicon p-type passivated emitter and rear cell (PERC) devices is still …

Evolution of LeTID defects in p-type multicrystalline silicon during degradation and regeneration

MA Jensen, AE Morishige, J Hofstetter… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
While progress has been made in develo** engineering solutions and understanding light-
and elevated temperature-induced degradation (LeTID) in p-type multicrystalline silicon (mc …