A BTI analysis tool (BAT) to simulate p-MOSFET ageing under diverse experimental conditions

An efficient analog compact NBTI model for stress and recovery based on activation energy maps

K Puschkarsky, H Reisinger, GA Rott… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Despite considerable research efforts, efficient and accurate analog bias temperature
instability (BTI) stress and recovery models are still urgently needed to evaluate aging in …
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A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs

VCP Silva, GI Wirth, JA Martino… - 2019 34th Symposium …, 2019 - ieeexplore.ieee.org
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for
advanced technology nodes. This work presents an experimental study of NBTI in omega …
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[PDF][PDF] Modeling Bias temperature instability in Si and SiC MOSFETs using activation energy maps

KA Waschneck - 2020 - scholar.archive.org
Microelectronic chips are at the heart of modern electronic devices and are also used in cars
for eg driver assistance, safety systems, powertrain control, communications, and …
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