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Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
Research progress of AlGaN-based deep ultraviolet light-emitting diodes
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …
AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates
The disinfection industry would greatly benefit from efficient, robust, high-power deep-
ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN …
ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN …
Increased light extraction of thin-film flip-chip UVB LEDs by surface texturing
Ultraviolet light-emitting diodes (LEDs) suffer from a low wall-plug efficiency, which is to a
large extent limited by the poor light extraction efficiency (LEE). A thin-film flip-chip (TFFC) …
large extent limited by the poor light extraction efficiency (LEE). A thin-film flip-chip (TFFC) …
Breaking the transverse magnetic-polarized light extraction bottleneck of ultraviolet-C light-emitting diodes using nanopatterned substrates and an inclined reflector
AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (UV-C) spectral
range (210–280 nm) exhibit extremely low external quantum efficiency, primarily due to the …
range (210–280 nm) exhibit extremely low external quantum efficiency, primarily due to the …
[HTML][HTML] Growth of highly conductive Al-rich AlGaN: Si with low group-III vacancy concentration
The impact of AlGaN growth conditions on AlGaN: Si resistivity and surface morphology has
been investigated using metalorganic chemical vapor deposition. Growth parameters …
been investigated using metalorganic chemical vapor deposition. Growth parameters …
[HTML][HTML] Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties
To date, it has remained challenging to achieve N-polar AlN, which is of great importance for
high power, high frequency, and high temperature electronics, acoustic resonators and …
high power, high frequency, and high temperature electronics, acoustic resonators and …
Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones
G Zhang, H Shao, M Zhang, Z Zhao, C Chu, K Tian… - Optics …, 2021 - opg.optica.org
It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-
emitting didoes (DUV LEDs) can be enhanced by using truncated cone arrays with inclined …
emitting didoes (DUV LEDs) can be enhanced by using truncated cone arrays with inclined …
[HTML][HTML] Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition
Crack-free AlN films with threading dislocation density (TDD) below 10 9 cm− 2 are needed
for deep-UV optoelectronics. This is typically achieved using pulsed lateral overgrowth or …
for deep-UV optoelectronics. This is typically achieved using pulsed lateral overgrowth or …