Recent progress in two‐dimensional ferroelectric materials

Z Guan, H Hu, X Shen, P **ang… - Advanced Electronic …, 2020 - Wiley Online Library
The investigation of two‐dimensional (2D) ferroelectrics has attracted significant interest in
recent years for applications in functional electronics. Without the limitation of a finite size …

Ferroelectric tunnel junctions: modulations on the potential barrier

Z Wen, D Wu - Advanced materials, 2020 - Wiley Online Library
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides

L Rogée, L Wang, Y Zhang, S Cai, P Wang… - Science, 2022 - science.org
Two-dimensional materials with out-of-plane (OOP) ferroelectric and piezoelectric properties
are highly desirable for the realization of ultrathin ferro-and piezoelectronic devices. We …

Enhanced ferroelectricity in ultrathin films grown directly on silicon

SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu… - Nature, 2020 - nature.com
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …

[HTML][HTML] Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

RK Vasudevan, N Balke, P Maksymovych… - Applied Physics …, 2017 - pubs.aip.org
Ferroelectric materials have remained one of the major focal points of condensed matter
physics and materials science for over 50 years. In the last 20 years, the development of …

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Z **, J Ruan, C Li, C Zheng, Z Wen, J Dai, A Li… - Nature …, 2017 - nature.com
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential
applications in non-destructive readout non-volatile memories. Using a semiconductor …

Differentiating ferroelectric and nonferroelectric electromechanical effects with scanning probe microscopy

N Balke, P Maksymovych, S Jesse, A Herklotz… - ACS …, 2015 - ACS Publications
Ferroelectricity in functional materials remains one of the most fascinating areas of modern
science in the past several decades. In the last several years, the rapid development of …

Flexible ferroelectric element based on van der Waals heteroepitaxy

J Jiang, Y Bitla, CW Huang, TH Do, HJ Liu… - Science …, 2017 - science.org
We present a promising technology for nonvolatile flexible electronic devices: A direct
fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der …

Non-piezoelectric effects in piezoresponse force microscopy

D Seol, B Kim, Y Kim - Current Applied Physics, 2017 - Elsevier
Piezoresponse force microscopy (PFM) has been used extensively for exploring nanoscale
ferro/piezoelectric phenomena over the past two decades. The imaging mechanism of PFM …

Spin-filtering ferroelectric tunnel junctions as multiferroic synapses for neuromorphic computing

Y Yang, Z **, Y Dong, C Zheng, H Hu, X Li… - … Applied Materials & …, 2020 - ACS Publications
As nanoelectronic synapses, memristive ferroelectric tunnel junctions (FTJs) have triggered
great interest due to the potential applications in neuromorphic computing for emulating …