On noise-induced transient bit flips in subthreshold SRAM

L Van Brandt, F Silveira, JC Delvenne, D Flandre - Solid-State Electronics, 2023 - Elsevier
We propose a rigorous SPICE simulation framework, compatible with industrial process
design kits, to observe transient bit flips in CMOS SRAM due to the intrinsic transistor noise …

Pragmatic evaluation of process corners in ULP subthreshold circuits with quantum confinement effects in junctionless nanowire transistor

N Rai, S Semwal, RK Nirala… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This paper proposes a simplified analytical approach to analyze the influence of process
variations including quantum confinement effect (QCE) on the functionality of ultralow power …

Variability-Aware Noise-Induced Dynamic Instability of Ultra-Low-Voltage SRAM Bitcells

L Van Brandt, JC Delvenne… - 2024 IEEE 15th Latin …, 2024 - ieeexplore.ieee.org
Stability of ultra-low-voltage SRAM bitcells in re-tention mode is threatened by two types of
uncertainty: process variability and intrinsic noise. While variability dominates the failure …

Yield Maximization of Flip-Flop Circuits Based on Deep Neural Network and Polyhedral Estimation of Nonlinear Constraints

SA Sajjadi, SA Sadrossadat, A Moftakharzadeh… - IEEE …, 2024 - ieeexplore.ieee.org
In this paper, we propose a method based on deep neural networks for the statistical design
of flip-flops, taking into account nonlinear performance constraints. Flip-flop design and …

Modeling and Predicting Noise-Induced Failure Rates in Ultra-Low-Voltage SRAM Bitcells Affected by Process Variations

L Van Brandt, M Bonnin, MB da Silva… - … on Circuits and …, 2025 - ieeexplore.ieee.org
Stability of ultra-low-voltage SRAM bitcells in retention mode is threatened by two types of
uncertainty: process variability and intrinsic noise. While variability dominates the failure …

Stochastic nonlinear dynamical modelling of SRAM bitcells in retention mode

L Van Brandt, D Flandre… - 2024 8th IEEE Electron …, 2024 - ieeexplore.ieee.org
SRAM bitcells in retention mode behave as autonomous stochastic nonlinear dynamical
systems. From observation of variability-aware transient noise simulations, we provide an …

Efficient Memory Circuits Yield Analysis and Optimization Framework via Meta-Learning

Z Wang, L Pang, X Shi, L Shi - IEEE Transactions on Circuits …, 2024 - ieeexplore.ieee.org
Yield optimization is a computationally intensive process that requires repeated yield
estimation. In this brief, we propose a yield-driven optimization process based on meta …