Tunnel junction limited performance of InGaAsN/GaAs tandem solar cell
W Dawidowski, B Ściana, I Zborowska-Lindert… - Solar Energy, 2021 - Elsevier
From tandem solar cell we expect a wide absorption range due to different bandgaps of the
subcells, higher open circuit voltage V oc and finally better photo conversion efficiency η …
subcells, higher open circuit voltage V oc and finally better photo conversion efficiency η …
Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN pin Solar Cell
Basic knowledge about the factors and mechanisms affecting the performance of solar cells
and their identification is essential when thinking of future improvements to the device …
and their identification is essential when thinking of future improvements to the device …
Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
GaAsSbN alloys is recognized as an effective candidate to incorporate in multijunction solar
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
cell applications due to its advantages of being grown lattice-matched to GaAs and its …
[HTML][HTML] 1 eV Ga (NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
E Sterzer, O Maßmeyer, L Nattermann, K Jandieri… - AIP Advances, 2018 - pubs.aip.org
E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von
Hänisch, W. Stolz, K. Volz; 1 eV Ga (NAsSb) grown by MOVPE using di-tertiary-butyl-arsano …
Hänisch, W. Stolz, K. Volz; 1 eV Ga (NAsSb) grown by MOVPE using di-tertiary-butyl-arsano …
Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties
B Ściana, D Radziewicz, W Dawidowski… - Journal of Materials …, 2019 - Springer
This work presents the epitaxial growth and material properties of InGaAsN epilayers
obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was …
obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was …
[PDF][PDF] Serafi nczuk
W Dawidowski, B Sciana, K Bielak… - chemical vapor …, 2003 - researchgate.net
Basic knowledge about the factors and mechanisms affecting the performance of solar cells
and their identification is essential when thinking of future improvements to the device …
and their identification is essential when thinking of future improvements to the device …
Epitaxial growth and characterization of dilute nitride based “W”-quantum well heterostructures for laser applications
J Lehr - 2022 - archiv.ub.uni-marburg.de
In this present thesis, the growth by metal organic vapor phase epitaxy (MOVPE) of GaAs-
based materials is investigated to shift the emission wavelength to longer wavelengths. This …
based materials is investigated to shift the emission wavelength to longer wavelengths. This …
A novel study and research on multilayer AlAs/GaAs quantum dot inner layer for solar cell applications
HVD John, DJ Moni… - International Journal of …, 2021 - inderscienceonline.com
Quantum dot solar cell is effectively used in many solar applications to obtain the maximum
conversion efficiency. Using materials such as InAs and GaAs or the combination of strained …
conversion efficiency. Using materials such as InAs and GaAs or the combination of strained …