We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

▪ Abstract New classes of Sn-containing group IV semiconductors are described. Novel CVD
routes lead to growth of a broad range of Ge1− y Sn y alloys and compounds directly on Si …

We present evidence for a strong interaction between the conduction band and a narrow
resonant band formed by nitrogen states in Ga 1− x In x N y As 1− y alloys. The interaction …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We derive the effective-mass Hamiltonian for wurtzite semiconductors, including the strain
effects. This Hamiltonian provides a theoretical groundwork for calculating the electronic …

Using first principles band structure theory we have calculated (i) the alloy bowing
coefficients,(ii) the alloy mixing enthalpies, and (iii) the interfacial valence band offsets for …

The band gap of GaAsBi epitaxial layers as a function of bismuth concentration up to 3.6% is
determined. The optical transitions were measured by modulated electroreflectance. The …

The E 0, E 0+ Δ 0, E 1, E 1+ Δ 1, E 0′, and E 2 optical transitions have been measured in
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …

In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …