III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have
been considered as promising candidates for n-channel materials for post-Si low-power …

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at
4.2 K by means of field effect transport measurements using a model consisting of a …

This article summarizes some of the critical features of pure indium antimonide nanowires
(InSb NWs) growth and their potential applications in the industry. In the first section …

In this work, we present a study of the surface roughness dependent electron mobility in InAs
nanowires grown by the nickel-catalyzed chemical vapor deposition method. These …

InAs nanowire-based back-gated field-effect transistors realized starting from individual InAs
nanowires are investigated at different temperatures and as building blocks of inverter …

The superconducting proximity effect is probed experimentally in Josephson junctions
fabricated with InAs nanowires contacted by Nb leads. Contact transparencies $ t\sim 0.7 …

Precise measurements of a complete set of thermoelectric parameters on a single indium-
arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated …

Conversion of temperature gradients to charge currents in quantum dot systems enables
probing various concepts from highly efficient energy harvesting and fundamental …

We report on the selective area growth of InAs nanowires (NWs) by the catalyst-free vapor–
solid method. Well-ordered InAs NWs were grown on GaAs (111) B and Si (111) substrates …

Understanding the electrical properties of defect-free nanowires with different structures and
their responses under deformation are essential for design and applications of nanodevices …