Recommended methods to study resistive switching devices
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
Variability in resistive memories
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
[HTML][HTML] Brain-inspired computing with memristors: Challenges in devices, circuits, and systems
This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …
computing with memristors. We review the mechanisms of various memristive devices that …
On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
A collective study on modeling and simulation of resistive random access memory
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …
design and description of resistive random access memory (RRAM), being a nascent …
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández… - Journal of Physics D …, 2020 - iopscience.iop.org
A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
Memristor variability and stochastic physical properties modeling from a multivariate time series approach
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle
variability in memristors. These devices show variability linked to the inherent stochasticity of …
variability in memristors. These devices show variability linked to the inherent stochasticity of …
Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors
The threshold switching effect is considered of outmost importance for a variety of
applications ranging from the reliable operation of crossbar architectures to emulating …
applications ranging from the reliable operation of crossbar architectures to emulating …
A modeling methodology for resistive ram based on stanford-pku model with extended multilevel capability
J Reuben, D Fey, C Wenger - IEEE transactions on …, 2019 - ieeexplore.ieee.org
Modeling of resistive RAMs (RRAMs) is a herculean task due to its non-linearity. While the
exigent need for a model has motivated research groups to formulate realistic models, the …
exigent need for a model has motivated research groups to formulate realistic models, the …
Low Power Stochastic Neurons From SiO2-Based Bilayer Conductive Bridge Memristors for Probabilistic Spiking Neural Network Applications—Part I: Experimental …
P Bousoulas, C Tsioustas, J Hadfield… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The development of low-power neurons with an intrinsic degree of stochasticity is
considered quite important for the emulation of the respective probabilistic procedures that …
considered quite important for the emulation of the respective probabilistic procedures that …