A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Recent progress on the electronic structure, defect, and do** properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
Hyperbolic shear polaritons in low-symmetry crystals
The lattice symmetry of a crystal is one of the most important factors in determining its
physical properties. Particularly, low-symmetry crystals offer powerful opportunities to control …
physical properties. Particularly, low-symmetry crystals offer powerful opportunities to control …
Point defects in Ga2O3
MD McCluskey - Journal of Applied Physics, 2020 - pubs.aip.org
In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Vertical β-Ga₂O₃ Power Transistors: A Review
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
[ΒΙΒΛΙΟ][B] Gallium Oxide: Materials Properties, Crystal Growth, and Devices
M Higashiwaki, S Fujita - 2020 - books.google.com
This book provides comprehensive coverage of the new wide-bandgap semiconductor
gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent …
gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent …