A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …

JA Spencer, AL Mock, AG Jacobs, M Schubert… - Applied Physics …, 2022 - pubs.aip.org
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Recent progress on the electronic structure, defect, and do** properties of Ga2O3

J Zhang, J Shi, DC Qi, L Chen, KHL Zhang - APL Materials, 2020 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

SJ Pearton, F Ren, M Tadjer, J Kim - Journal of Applied Physics, 2018 - pubs.aip.org
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

X Chen, F Ren, S Gu, J Ye - Photonics Research, 2019 - opg.optica.org
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

β-Ga2O3 for wide-bandgap electronics and optoelectronics

Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

Hyperbolic shear polaritons in low-symmetry crystals

NC Passler, X Ni, G Hu, JR Matson, G Carini, M Wolf… - Nature, 2022 - nature.com
The lattice symmetry of a crystal is one of the most important factors in determining its
physical properties. Particularly, low-symmetry crystals offer powerful opportunities to control …

Point defects in Ga2O3

MD McCluskey - Journal of Applied Physics, 2020 - pubs.aip.org
In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …

Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3

Y Wang, J Su, Z Lin, J Zhang, J Chang… - Journal of Materials …, 2022 - pubs.rsc.org
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Vertical β-Ga₂O₃ Power Transistors: A Review

MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …

[ΒΙΒΛΙΟ][B] Gallium Oxide: Materials Properties, Crystal Growth, and Devices

M Higashiwaki, S Fujita - 2020 - books.google.com
This book provides comprehensive coverage of the new wide-bandgap semiconductor
gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent …