Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …

Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …

The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior
of power devices. Considering the high switching-speed capability of wide band-gap …

Overcurrent protection of silicon carbide (SiC) metal–oxide–semiconductor field-effect
transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper …

In this paper, a high-temperature, high-frequency, wire-bond-based multichip phase-leg
module was designed, fabricated, and fully tested. Using paralleled Silicon Carbide (SiC) …

In a phase-leg configuration, the high-switching-speed performance of silicon carbide (SiC)
devices is limited by the interaction between the upper and lower devices during the …

The electric propulsion drives for the more-electric aircraft need lightweight and high-
efficiency power converters. Moreover, a modular approach to the construction of the drive …

SiC MOSFET has low on-state resistance and can work on high switching frequency, high
voltage, and some other tough conditions with less temperature drift, which could provide …

Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching
speed potential. However, the actual speed in practical application is limited by circuit …

Silicon carbide (SiC) devices have attracted widespread attention because of their superior
characteristics. However, not only the higher slew rate of drain-source voltage but also the …