Approaches to enhancing gas sensing properties: A review
Z Yuan, R Li, F Meng, J Zhang, K Zuo, E Han - Sensors, 2019 - mdpi.com
A gas nanosensor is an instrument that converts the information of an unknown gas
(species, concentration, etc.) into other signals (for example, an electrical signal) according …
(species, concentration, etc.) into other signals (for example, an electrical signal) according …
Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering
Y Nishikawa, K Ueno, A Kobayashi… - Applied Physics Letters, 2023 - pubs.aip.org
This study reports on the epitaxial growth of heavily Sn-doped GaN films by pulsed
sputtering deposition (PSD) and their basic characteristics, which include electrical, optical …
sputtering deposition (PSD) and their basic characteristics, which include electrical, optical …
Ge doped GaN and Al0. 5Ga0. 5N-based tunnel junctions on top of visible and UV light emitting diodes
The use of tunnel junctions (TJs) is a potential solution in blue light-emitting diodes (LEDs)
to poor p-contacts, replacing it with another n-contact. TJs are even more advantageous for …
to poor p-contacts, replacing it with another n-contact. TJs are even more advantageous for …
Manufacturing and design of smart polymer composites
Smart polymers (SP) have been extensively developed for inventive and valuable
resolutions in diverse applications such as in the electrical and biomedical fields. Numerous …
resolutions in diverse applications such as in the electrical and biomedical fields. Numerous …
Self-compensation in heavily Ge doped AlGaN: A comparison to Si do**
Self-compensation in Ge-and Si-doped Al 0.3 Ga 0.7 N has been investigated in terms of the
formation of III vacancy and donor-vacancy complexes. Both Ge-and Si-doped AlGaN layers …
formation of III vacancy and donor-vacancy complexes. Both Ge-and Si-doped AlGaN layers …
Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model
G Thomas, RA Ferreyra, MA Quiroga - Applied Surface Science, 2024 - Elsevier
Germanium, gallium, nitrogen, and oxygen deposition on both GaN (0001) and GaN (000 1
̄) surfaces were investigated. A multiscale simulation framework was implemented. The …
̄) surfaces were investigated. A multiscale simulation framework was implemented. The …
Electrical transport properties of highly doped N-type GaN materials
L Konczewicz, E Litwin-Staszewska… - Semiconductor …, 2022 - iopscience.iop.org
This paper presents a comparative study of electron transport phenomena in n-type gallium
nitride strongly doped, above the Mott transition, with silicon and germanium. The samples …
nitride strongly doped, above the Mott transition, with silicon and germanium. The samples …
[HTML][HTML] Complexes and compensation in degenerately donor doped GaN
Gallium nitride is an increasingly technologically relevant material system. While donor
do** GaN to low and intermediate dopant concentrations using silicon and germanium …
do** GaN to low and intermediate dopant concentrations using silicon and germanium …
[HTML][HTML] Electron mobility of heavily doped semiconductors including multiple scattering by ionized impurities
A theoretical treatment of the multiple scattering problem for electrons in heavily doped
semiconductors is developed for the purpose of resolving a long-standing discrepancy …
semiconductors is developed for the purpose of resolving a long-standing discrepancy …
Nanostars in Highly Si-Doped GaN
Understanding the relation between surface morphology during epitaxy of GaN: Si and its
electrical properties is important from both the fundamental and application perspectives …
electrical properties is important from both the fundamental and application perspectives …