Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

The kinetics of silicide growth are classified into three different categories:(a) diffusion
controlled,(b) nucleation controlled,(c) others (reaction rate controlled). These are analyzed …

In this paper, we review some of the advantages and disadvantages of nickel silicide as a
material for the electrical contacts to the source, drain and gate of current and future CMOS …

If one excepts the silicides of platinum, which are used to a considerable extent in the
present technology of silicon devices, and have therefore received much attention, no …

The present paper focuses on the Spark Plasma Sintering (SPS) manufacturing of a new
type of self-healing thermal barrier coating (TBC) and a study of its thermal cycling …

The author proposes a physico-chemical approach to examining the process of solid state
growth of layers of chemical compounds at the interface between initial substances in binary …

In spite of a quite abundant literature about the silicides of nickel in thin film form (even an
incomplete list of publication includes some thirteen articles), 1-13 there remain significant …

The monograph deals with a physico-chemical approach to the problem of solid-state
growth of chemical compound layers and reaction diffusion in binary heterogeneous …

Metal silicides and their nanostructures have been found to be suitable candidates for
device manufacturing in contemporary microelectronics industries to reduce contact …

Metal silicide thin films grown in a controlled manner on silicon wafers play an important role
in device fabrication for the microelectronic industry. Due to their low resistivity they are …