Conspectus Nanothermometry is increasingly demanded in frontier research in physics,
chemistry, materials science and engineering, and biomedicine. An ideal thermometer …

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …

The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …

Spin S= 1 centers in diamond and recently in silicon carbide, have been identified as
interesting solid-state qubits for various quantum technologies. The largely-studied case of …

Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable
platforms for various quantum technologies. However, the low photon count rate significantly …

Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information
processing. However, the challenge of ionization during optical manipulation leads to …

The full realization of spin qubits for quantum technologies relies on the ability to control and
design the formation processes of spin defects in semiconductors and insulators. We …

The temperature dependence of the zero-field splitting (ZFS) between the| ms= 0〉 and|
ms=±1〉 levels of the nitrogen-vacancy (NV) center's electronic ground-state spin triplet can …

Silicon carbide (SiC) can be synthesized in a number of different structural forms known as
polytypes with a vast array of optically active point defects of interest for quantum information …

Recent studies have widely acknowledged the utility of silicon carbide (SiC) spin defects in
solid-state quantum information processing. However, the practical implementation of these …