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[HTML][HTML] Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory
Mechanically exfoliated two-dimensional α-In 2 Se 3 flakes are used as the channel material
in field effect transistors. N-type conduction with 0.14 cm 2 V s carrier mobility is reported …
in field effect transistors. N-type conduction with 0.14 cm 2 V s carrier mobility is reported …
Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3
Abstract The layered semiconductor In2Se3 has a low temperature crystalline–crystalline
(α→ β) phase transformation with distinct electrical properties that make it a promising …
(α→ β) phase transformation with distinct electrical properties that make it a promising …
An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In 2 Se 3− x O x
Two-dimensional (2D) ferroelectric field-effect transistors (Fe-FETs) have attracted extensive
interest as a competitive platform for implementing future-generation functional electronics …
interest as a competitive platform for implementing future-generation functional electronics …
Non-volatile control of topological phase transition in an asymmetric ferroelectric In 2 Te 2 S monolayer
G Song, Y Wu, L Cao, G Li, B Zhang, F Liang… - Physical Chemistry …, 2023 - pubs.rsc.org
The coupling of topological electronic states and ferroelectricity is highly desired due to their
abundant physical phenomenon and potential applications in multifunctional devices …
abundant physical phenomenon and potential applications in multifunctional devices …
Ferroelectric quantum spin Hall effect in two-dimensional In2TeS2
Ferroelectricity and band topology are hot topics in condensed matter physics, and the
nonvolatile regulation of topological orders through ferroelectric properties is crucial for the …
nonvolatile regulation of topological orders through ferroelectric properties is crucial for the …
Photoelectric and pyroelectric performance modulated by the in-plane ferroelectric polarization in multi-functional α-In2Se3-based transistor
C Cai, J Peng, S Ling, P Hou - Applied Physics Letters, 2023 - pubs.aip.org
As a typical two-dimensional van der Waals ferroelectric material, α-In 2 Se 3 has great
potential in the applications of optoelectronic devices, memories, sensors, detectors, and …
potential in the applications of optoelectronic devices, memories, sensors, detectors, and …
Optoelectronic properties of two-dimensional α-In2Se3 Field Effect Transistor
Mechanically exfoliated two-dimensional α-In_2 Se 3 flakes are used as the channel
material in field effect transistors. N-type conduction with ∼0.1(cm^2)/Vs carrier mobility is …
material in field effect transistors. N-type conduction with ∼0.1(cm^2)/Vs carrier mobility is …