Resistive memory element
YK Chang, JW Peng, LH Peng - US Patent 10,050,156, 2018 - Google Patents
A resistive memory element includes a P-type layer, a tunneling structure and an N-type
layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on …
layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on …