During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

The performance of tunnel field-effect transistors (TFETs) based on 2-D transition metal
dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations …

Various challenges arise in a continuous scaling of MOSFET like Short Channel Effects, as
the channel length shrinks, current is produced in OFF-state, which also results in high …

This paper examines a tunnel field-effect transistor (TFET) as a promising device for
achieving steeper switching and better electrical performances in low-power operation. It …

Scaling of conventional MOSFET is hindered by the fact that the subthreshold swing cannot
be reduced less than 60 mV/decade. Tunnel FET (TFET) is a promising candidate to replace …

In this paper, we propose and simulate a novel drain-engineered structure of a quadruple-
gate tunnel fieldeffect transistor (TFET). The proposed device employs a lateral dual source …

To suppress the ambipolar behavior and improve RF performance in tunnel field-effect
transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more …

A novel device configuration is presented for do**-less charge plasma tunnel FET (TFET)
for suppression of ambipolar nature with improved high-frequency figures of merit. For this …

Steep rise in the subthreshold slope, high current driving capability, and negligible
ambipolarity are the major prerequisite conditions of tunnel FETs (TFETs) to make it …

In this paper, the effect of a proposed drain do** engineering on the ambipolar conduction
and high-frequency performance of tunneling FETs (TFETs) is investigated using 2-D TCAD …