A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …

An attractive alternative for extending the scaling of Flash-type memories is to replace the
conventional floating gate (a poly-Si layer) by laterally isolated floating nodes in the form of …

In this chapter, we will present a digest of the main materials science aspects of the
controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal …

Microelectronics high education in France is organized through a network composed of
twelve centers, six of them having clean-rooms and technological facilities. During the year …

Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of
related silicon-based MIS devices - ScienceDirect Skip to main contentSkip to article …

In this work, we show how to manipulate two-dimensional arrays of Si NCs in thin (⩽ 10nm)
SiO2 layers by ultra-low-energy (⩽ 1keV) ion implantation and subsequent thermal …

We present a simple method for the fabrication of Pt nanoparticles embedded in a high-k
dielectric. The nanoparticles are formed during the first deposition stages of a thin Pt layer …

In this paper, we present a study on the contribution of silicon nanocrystals to the electrical
transport characteristics of large (100μm× 100μm) and small (100nm× 100nm) metal-oxide …

Nanocrystal Non-Volatile Memory Devices Page 1 Nanocrystal non-volatile memory devices Zs.
J. Horváth a and P. Basa b Hungarian Academy of Sciences, Research Institute for Technical …

In this article, we present the room-temperature current-voltage characteristics of a
nanometer scale (100× 100 nm 2) metal-oxide-semiconductor capacitor containing few (less …