Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Applications of phosphorene and black phosphorus in energy conversion and storage devices
The successful isolation of phosphorene (atomic layer thick black phosphorus) in 2014 has
currently aroused the interest of 2D material researchers. In this review, first, the …
currently aroused the interest of 2D material researchers. In this review, first, the …
Cation substitution in earth‐abundant kesterite photovoltaic materials
J Li, D Wang, X Li, Y Zeng, Y Zhang - Advanced Science, 2018 - Wiley Online Library
As a promising candidate for low‐cost and environmentally friendly thin‐film photovoltaics,
the emerging kesterite‐based Cu2ZnSn (S, Se) 4 (CZTSSe) solar cells have experienced …
the emerging kesterite‐based Cu2ZnSn (S, Se) 4 (CZTSSe) solar cells have experienced …
Defect Control for 12.5% Efficiency Cu2ZnSnSe4 Kesterite Thin‐Film Solar Cells by Engineering of Local Chemical Environment
Abstract Kesterite‐based Cu2ZnSn (S, Se) 4 semiconductors are emerging as promising
materials for low‐cost, environment‐benign, and high‐efficiency thin‐film photovoltaics …
materials for low‐cost, environment‐benign, and high‐efficiency thin‐film photovoltaics …
Over 12% efficient kesterite solar cell via back interface engineering
Y Zhao, Z Yu, J Hu, Z Zheng, H Ma, K Sun… - Journal of Energy …, 2022 - Elsevier
Abstract Kesterite Cu 2 ZnSn (S, Se) 4 (CZTSSe) has attracted considerable attention as a
non-toxic and earth-abundant solar cell material. During selenization of CZTSSe film at high …
non-toxic and earth-abundant solar cell material. During selenization of CZTSSe film at high …
10% Efficiency Cu2ZnSn (S, Se) 4 thin film solar cells fabricated by magnetron sputtering with enlarged depletion region width
Abstract High performance Cu 2 ZnSn (S, Se) 4 (CZTSSe) solar cells are fabricated by
selenization of the precursor films of Mo/Sn/Cu/ZnS/Sn/ZnS/Cu deposited by magnetron …
selenization of the precursor films of Mo/Sn/Cu/ZnS/Sn/ZnS/Cu deposited by magnetron …
A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe2 for Efficient Cu2ZnSnSe4 Solar Cells
The influence of a prealloying process on the formation of MoSe2 and thus on the
performance of Cu2ZnSnSe4 (CZTSe) solar cells is investigated using sputtering deposition …
performance of Cu2ZnSnSe4 (CZTSe) solar cells is investigated using sputtering deposition …
Path towards high-efficient kesterite solar cells
D Wang, W Zhao, Y Zhang, SF Liu - Journal of energy chemistry, 2018 - Elsevier
Abstract Kesterite structure semiconductor Cu 2 ZnSn (S, Se) 4 is one of the most promising
candidate as a light absorber material to overtake the next generation of thin film solar cells …
candidate as a light absorber material to overtake the next generation of thin film solar cells …
Defects and surface electrical property transformation induced by elemental interdiffusion at the p–n heterojunction via high-temperature annealing
S Wang, Z Shen, Y Sun, H Li, K Zhang… - … Applied Materials & …, 2021 - ACS Publications
Heterojunction annealing is widely used to improve the efficiency of kesterite thin-film solar
cells. However, the efficiency will decrease when the annealing temperature is high, and the …
cells. However, the efficiency will decrease when the annealing temperature is high, and the …
Growth of Cu2ZnSnSe4 Film under Controllable Se Vapor Composition and Impact of Low Cu Content on Solar Cell Efficiency
It is a challenge to fabricate high quality Cu2ZnSnSe4 (CZTSe) film with low Cu content
(Cu/(Zn+ Sn)< 0.8). In this work, the growth mechanisms of CZTSe films under different Se …
(Cu/(Zn+ Sn)< 0.8). In this work, the growth mechanisms of CZTSe films under different Se …
Insight into the role of post-annealing in air for high efficient Cu2ZnSn (S, Se) 4 solar cells
S Gao, Y Zhang, J Ao, X Li, S Qiao, Y Wang… - Solar Energy Materials …, 2018 - Elsevier
The device performance of Cu 2 ZnSn (S, Se) 4 (CZTSSe) solar cells are improved
significantly by annealing the full devices at 270° C for 3 min in air. This paper proposes the …
significantly by annealing the full devices at 270° C for 3 min in air. This paper proposes the …