The trend predicted by Moore's law sets forth strict requirements on the electronic properties
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …

This paper summarizes some of the essential aspects for the fabrication of functional
devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting …

Strain-gated piezotronic transistors have been fabricated using vertically aligned ZnO
nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor–liquid …

Abstract Quasi-one-dimensional (1D) semiconducting nanowires (NWs), with excellent
electrostatic control capability, are widely regarded as advantageous channels for the …

Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si
core/shell nanowires epitaxially grown and integrated on a⟨ 111⟩ Si substrate were …

Motivated to produce reliable and performant SiNW-based transistors, we present in this
work how percolating networks composed of randomly oriented SiNWs, called nanonets, are …

In this paper, we present the fabrication and electrical characterization of a MOS gated diode
based on axially doped silicon nanowire (NW) pin junctions. These nanowires are grown by …

The present work focuses on a qualitative analysis of localised I–V characteristics based on
the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs) …

Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce
structures of uniform size and shape. This study overcomes this constraint by applying laser …

The mobile market is growing rapidly, as is the demand for high performance and multiple
functions in a single device. 3D integration is a promising solution for integrating …