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Sub-6 GHz RF SPDT Switches Designed in an Advanced 28 nm Fully-Depleted Silicon-on-Insulator Technology with a High Resistivity Substrate
In this paper two RF switches named as 3-stack and 12-stack are studied. They are
designed to have the same overall RON and built using a 28 nm FD-SOI technology atop of …
designed to have the same overall RON and built using a 28 nm FD-SOI technology atop of …