A cost effective RF-SOI Drain Extended MOS transistor featuring P SAT= 19dBm@ 28GHz & V DD=...

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Sub-6 GHz RF SPDT Switches Designed in an Advanced 28 nm Fully-Depleted Silicon-on-Insulator Technology with a High Resistivity Substrate

M Nabet, M Rack, S Crémer, F Paillardet… - 2024 19th European …, 2024 - ieeexplore.ieee.org
In this paper two RF switches named as 3-stack and 12-stack are studied. They are
designed to have the same overall RON and built using a 28 nm FD-SOI technology atop of …
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