[書籍][B] GaAs and related materials: bulk semiconducting and superlattice properties
S Adachi - 1994 - World Scientific
The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors
The development of a method for calculating the frequency-dependent second harmonic
generation coefficient of insulators and semiconductors based on the self-consistent …
generation coefficient of insulators and semiconductors based on the self-consistent …
Optical and structural properties of III-V nitrides under pressure
NE Christensen, I Gorczyca - Physical Review B, 1994 - APS
Self-consistent linear muffin-tin-orbital band-structure calculations are used to investigate
the optical and structural properties of III-V semiconducting nitrides under hydrostatic …
the optical and structural properties of III-V semiconducting nitrides under hydrostatic …
Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductors
Zinc-blende-type semiconductors differ from their diamondlike counterparts by the absence
of inversion symmetry. This produces a number of spin splittings and spin-orbit coupling …
of inversion symmetry. This produces a number of spin splittings and spin-orbit coupling …
Calculation of second-order optical response in semiconductors
JLP Hughes, JE Sipe - Physical Review B, 1996 - APS
We present a first-principles calculation of two second-order optical response functions as
well as the dielectric function for GaAs and GaP. Specifically, we evaluate the dielectric …
well as the dielectric function for GaAs and GaP. Specifically, we evaluate the dielectric …
Exact exchange Kohn-Sham formalism applied to semiconductors
Abstract We present a Kohn-Sham method that allows one to treat exchange interactions
exactly within density-functional theory. The method is used to calculate lattice constants …
exactly within density-functional theory. The method is used to calculate lattice constants …
Optical properties of semiconductors within the independent-quasiparticle approximation
R Del Sole, R Girlanda - Physical Review B, 1993 - APS
We develop a gauge-invariant formalism for calculating the optical properties of solids within
the random-phase approximation and the GW approach to electron bands (the independent …
the random-phase approximation and the GW approach to electron bands (the independent …
Calculation of optical excitations in cubic semiconductors. I. Electronic structure and linear response
MZ Huang, WY Ching - Physical Review B, 1993 - APS
The electronic structures and the linear optical dielectric functions of 18 cubic
semiconductors are studied by the first-principles orthogonalized linear-combination-of …
semiconductors are studied by the first-principles orthogonalized linear-combination-of …
Electronic bands of III-V semiconductor polytypes and their alignment
The quasiparticle band structures of four polytypes 3C, 6H, 4H, and 2H of GaP, GaAs, GaSb,
InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction …
InP, InAs, and InSb are computed with high accuracy including spin-orbit interaction …
Wannier interpolation of the electron-phonon matrix elements in polar semiconductors: Polar-optical coupling in GaAs
We generalize the Wannier interpolation of the electron-phonon matrix elements to the case
of polar-optical coupling in polar semiconductors. We verify our methodological …
of polar-optical coupling in polar semiconductors. We verify our methodological …